Etching of metals which do not have volatile compounds such as Cu Au cannot be accomplished in RIE systems. On the other hand physical etching with accelerating Ar ions is possible. Typically surface is patterned with thick resist for masking and the energetic ion flux during etching overheats the substrate and the resist. Unless efficient means of removing the heat is found resist becomes very difficult to remove.
We have demonstrated capability of keeping substrate temperature below 50 C along with wafer rotation to achieve the desired uniformity which makes it possible to etch wafers with resist pattern.
Features
1. 不锈钢方型离子束腔体 14.5" SS Cube ion beam chamber
2. 1000伏直流离子枪 12 cm DC Ion gun 1000V 500 mA ，DC motor driven SS shutters
3. 离子束中和器 Ion Beam neutralizer
4. 质量流量控制的氩气路 Ar MFC
5. 6"水冷基底卡盘 Chilled water cooled 6 substrate platen
6. 晶圆旋转 Wafer rotation 3-10 RPM Vacuum stepper motor
7. 晶圆倾斜 Wafer Tilt with a stepper motor through differentially pumped rotational seal
8. 样品自动取放 Manual or Auto wafer load/unload
9. 刻蚀速度 Typical Etch Rates: 200A/min Cu 500A/min Si
10. 刻蚀均匀 +/-5% etch uniformity over 4 area
11. 真空 5x 10-6Torr < 20 minutes <2 x10-7Torr (2 days) Base Pressure with 500 l/sec turbo
12. 极限真空 8x10-8Torr Base pressure with 1000 l/sec Turbo pump
13. 磁控溅射氮化硅保护金属表面不被氧 Magnetron Sputtering of Si3N4to protect etched metal surfaces from oxidation
14. 计算机控PC Controlled with LabVIEW Software
15. 菜单驱动，密码保 Recipe Driven Password Protected
16. 全安全互 Fully Safety Interlocked
