| 1 | 应用范围: | 研究半导体器件和半导体材料电学特性、精密测量半导体材料的载流子浓度、迁移率、电阻率、霍尔系数等重要参数 | |
| 2 | 觃/strong>栻/strong>: | ||
| 2-1 | Maximum sample size (Small board) - 15mm x15mm **样品尺寸:15mm x15mm (可定? |
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| 2-2 | Measurement Temperature: 300K (room temperature) optional 77K. 测试温度: 室温、可选配液氮低温77K |
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| 2-3 | Measurement Material: Semiconductors material such as Si SiGe SiC，GaAs InGaAs InP GaN ITO (N Type & P Type) 测试材质:半导体类材质、如９/p> Si SiGe SiC ZnO GaAs InGaAs InP GaN ITO等所有半导体薄膜(P型和N? |
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| 2-4 | Magnet Flux Density: 0.68 Tesla nominal 1% of marked value 磁场强度: 0.68 Tesla 1% |
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| 2-5 | Magbnet Stability: 2% over 1 years 稳定? 2% （一年后（/td> |
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| 2-6 | Uniformity: 1% over 20mm diameter from center 均匀度： 1%(20mm直径圆范围内) |
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| 2-7 | Pole Gap: 20 mm 磁极间隙?0毫米 |
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| 2-8 | Input voltage range: 1V to 300V 输入电压范围?V ~300V |
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| 2-9 | Hall voltage range: 10uV to 2000mV 霍尔电压范围: 10uV to 2000mV |
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| 2-10 | Resistivity (Ohm.cm): 10-5to 107 电阻 (.?: 10-5to 107 |
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| 2-11 | Mobility (cm2/Volt.sec): 1 ~ 107 迁移?cm2/Volt.sec): 1 ~ 107 |
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| 2-12 | Carrier Density (cm-3): 107~ 1021 载流子浓?1/cm3): 107~ 1021 |
