EMT2400常温?7k霍尔效应测试?/span>
测量半导体薄膛/span>Si SiGe SiC GaAs InGaAs InP GaN (N Type & P Type)等材质的半导体薄膜中载流子类型?/span>载流子浓度、迁移率、电阻率、霍尔系数等参数、/span>
样品尺寸: |
Up to 15 mm x 15 mm Optional for larger size |
标准样品 |
旟/span> |
测试温度: |
室温?/span>77k |
载流子浓?/span>(cm-3): |
|
迁移玆/span>(): |
0.5 ~ 108cm2/Volt.sec |
电阻玆/span>(?.㎜/span>): |
10-3｝/span>108 |
电流溏/span>: |
100pA to1A |
电流分辨玆/span> |
1.0A@50pA; 100.0A@1nA |
**电压 |
210V@105mA21V@1.05A (20W) |
霍尔电压范围: |
5V to200V |
输入电压范围９/span> |
5V to200V |
磁极间隙９/span> |
20mm |
均匀度： |
< 1% |
稳定?/span>: |
0.02%(one year) |
磁场强度: |
0.75T |
升级变温霍尔系统 |
4K~1000K |
升级电磁圹/span> |
1T 1.5T 2T |
保修 |
一年质俜/span> |
