“For Wafer Perpendicular Magnetic Layer Evaluation System “晶片”垂直磁层评估系绞/span> |
|
优势 |
|
测量垂直磁层12英寸的晶圅/span> |
|
规格 |
|
主要功能 |
Kerr Loop Measurement and Mapping Measurement (Polar Kerr Effect) |
光源 |
Diode Laser |
探测光斑 |
1mm (Typ.) |
磁场 |
Max. 25Oe (2.5T) |
“For Wafer In-Plane Magnetic Layer Evaluation System “晶片”平面磁层评估系绞/span> |
|
优势 |
|
测量平面磁层12英寸的晶圅/span> |
|
规格 |
|
主要功能 |
Kerr Loop Measurement and Mapping Measurement (Longitudinal Kerr Effect) |
光源 |
Diode Laser |
探测光斑 |
1mm (Typ.) |
磁场 |
Max. 2kOe (0.2T) |
“For Hard Disc Perpendicular Magnetic Recording Layer Evaluation System “硬盘”垂直磁记录层评估系绞/span> |
|
优势 |
|
测量垂直磁性介质的2.5英寸?.5英寸的硬盗/span> |
|
规格 |
|
主要功能 |
Kerr Loop Measurement and Mapping Measurement (Polar Kerr Effect) |
光源 |
Diode Laser |
探测光斑 |
1mm (Typ.) |
磁场 |
Max. 25kOe (2.5T) |
“For Hard Disc Soft Under Layer (SUL) Evaluation System “硬盘”下软层评估系统 |
|
优势 |
|
测量软层下的2.5英寸?.5英寸的硬盗/span> |
|
规格 |
|
主要功能 |
Kerr Loop Measurement and Mapping Measurement (Longitudinal Kerr Effect) |
光源 |
Diode Laser |
探测光斑 |
1mm (Typ.) |
磁场 |
Max. 3kOe (0.3T) |
