仪器简介：少子寿命测试�?/strong>性能参数�

测量原理 QSSPC（准稳态光电导（�/p>

少子寿命测量范围 100 ns-10 ms

测试模式：QSSPC，瞬态，寿命归一化分枏�/p>

电阻率测量范� 3�?00 (undoped) Ohms/sq.

注入范围�?013-1016cm-3

感测器范� 直径40-mm

测量样品规格 标准直径: 40�?10 mm （或更小尺寸（�/p>

硅片厚度范围 10�?000 ��m

外界环境温度 20��C�?5��C

功率要求 测试�? 40 W 电脑控制器：200W 光源�?0W

通用电源电压 100�?40 VAC 50/60 Hz

主要特点:

　　适应低电阻率样片的测试需要，*小样品电阻率可达0.1ohmcm

　　全自动操作及数据处理

　　对太阳能级硅片，测试前一般不需钝化处理

　　能够测试单晶或多晶硅棒、片或硅�?/p>

　　可以选择测试样品上任意位�?/p>

　　能提�?*的表面化学钝化处理方泔�/p>

　　对各道工序的样品均可进行质量监控９�/p>

　　硅棒、切片的出厂、进厂检�?/p>

　　扩散后的硅片

　　表面镀膜后的硅片以及成品电江�/strong>

少子寿命测试�?/strong>

Best available calibrated measurement of carrier recombination lifetime. Widely used for both monocrystalline and multicrystalline wafers.

Product Overview

WCT testers showcase our unique measurement and analysis techniques� including the highly regarded Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments in 1994.

The QSSPC technique is ideal for monitoring multicrystalline wafers� dopant diffusions� and low-lifetime samples. This method complements the use of the transient photoconductance technique that is also standard on this instrument.

The QSSPC lifetime measurement also yields the implied open-circuit voltage (versus illumination) curve� which is comparable to an I-V curve at each stage of a solar cell process.

WCT System Capabilities

Primary application:

Step-by-step monitoring and optimization of a fabrication process.

Other applications:

　

Sinton Instruments' analysis yields a calibrated carrier injection level for each wafer� so you can interpret lifetime data in a physically precise way. Specific parameters of interest are displayed and logged for each measurement.

? Monitoring initial material quality

? Detecting heavy metals contamination during wafer processing

? Evaluating surface passivation and emitter dopant diffusion

? Evaluating process-induced shunting using the implied I-V measurement

Further Information

技术参数：

FAQ:

? What is the recombination lifetime?

? How does the solar cell efficiency depend on the lifetime?

? What determines the lifetime in silicon?

? How is lifetime measured by the Sinton Instruments tools?

? How is the data analyzed?

? Can you measure surface recombination velocity?

? Does the system measure emitter saturation current density?

? Can wafers be measured with no surface passivation (“out of the box�??

? Can any of these instruments do lifetime maps?

? How do these measurements compare to microwave PCD?

? What lifetimes can be measured?

? What is the smallest sample size?

? How do you measure bulk lifetime on blocks or ingots?

? At what carrier density should I report the result?

? Can the lifetime tester be used to detect Fe contamination?

? How is the instrument calibrated?

? When should wafers be tested inline?

? Does the lifetime tester measure the trapping?

　

Module and Cell Flash Testers frequently asked questions

主要特点９�/strong>

常见问题９�/p>

WT-2000与WCT-120测少子寿命的差异＞�/p>

WCT用的是Quasi-Steady-State Photoconductance（QSSPC准稳态光电导）而WT2000是微波光电导、�/p>

WCT-120/100准稳态光电导法测少子寿命的原理？

WCT用的是Quasi-Steady-State Photoconductance（QSSPC准稳态光电导（�/p>