作为第三代半导体材料，氮化镓 (GaN) 具有优越的禁带宽度（远高于硅和碳化硅）、热导率、电子迁移率以及导通电阻。由于高温下GaN生长过程中N的离解压力较高，很难获得大尺寸的GaN单晶材料，所以在异质衬底上制备外延GaN薄膜已经成为研究GaN材料和器件的主要方法。目前，GaN外延生长方法有氢化物气相外延（HVPE）、分子束外延（MBE）、金属有机化合物化学气相沉淀（MOCVD）。目前，大多数商用器件都是基于GaN异质外延的，主要衬底是碳化硅（SiC）、硅（Si）和蓝宝石（Sapphire）、�span aria-hidden="true" style="color: unset; font: unset; font-palette: unset; font-synthesis: unset; forced-color-adjust: unset; text-orientation: unset; text-rendering: unset; -webkit-font-smoothing: unset; -webkit-locale: unset; -webkit-text-orientation: unset; -webkit-writing-mode: unset; writing-mode: unset; zoom: unset; accent-color: unset; place-content: unset; place-items: unset; place-self: unset; alignment-baseline: unset; animation-composition: unset; animation: unset; app-region: unset; appearance: unset; aspect-ratio: unset; backdrop-filter: unset; backface-visibility: unset; background-image: unset; background-position: unset; background-size: unset; background-repeat: unset; background-attachment: unset; background-origin: unset; background-clip: unset; background-blend-mode: unset; baseline-shift: unset; baseline-source: unset; block-size: unset; border-block: unset; border: unset; border-radius: unset; border-collapse: unset; border-end-end-radius: unset; border-end-start-radius: unset; border-inline: unset; border-start-end-radius: unset; border-start-start-radius: unset; bottom: unset; box-shadow: unset; box-sizing: unset; break-after: unset; break-before: unset; break-inside: unset; buffered-rendering: unset; caption-side: unset; caret-color: unset; clear: unset; clip: rect(0px, 0px, 0px, 0px); clip-path: unset; clip-rule: unset; color-interpolation: unset; color-interpolation-filters: unset; color-rendering: unset; color-scheme: unset; columns: unset; column-fill: unset; gap: unset; column-rule: unset; column-span: unset; contain: unset; contain-intrinsic-block-size: unset; contain-intrinsic-size: unset; contain-intrinsic-inline-size: unset; container: unset; content: unset; content-visibility: unset; counter-increment: unset; counter-reset: unset; counter-set: unset; cursor: unset; cx: unset; cy: unset; d: unset; display: unset; dominant-baseline: unset; empty-cells: unset; fill: unset; fill-opacity: unset; fill-rule: unset; filter: unset; flex: unset; flex-flow: unset; float: unset; flood-color: unset; flood-opacity: unset; grid: unset; grid-area: unset; height: unset; hyphenate-character: unset; hyphenate-limit-chars: unset; hyphens: unset; image-orientation: unset; image-rendering: unset; initial-letter: unset; inline-size: unset; inset-block: unset; inset-inline: unset; isolation: unset; left: unset; letter-spacing: unset; lighting-color: unset; line-break: unset; list-style: unset; margin-block: unset; margin: unset; margin-inline: unset; marker: unset; mask: unset; mask-type: unset; math-depth: unset; math-shift: unset; math-style: unset; max-block-size: unset; max-height: unset; max-inline-size: unset; max-width: unset; min-block-size: unset; min-height: unset; min-inline-size: unset; min-width: unset; mix-blend-mode: unset; object-fit: unset; object-position: unset; object-view-box: unset; offset: unset; opacity: unset; order: unset; orphans: unset; outline: unset; outline-offset: unset; overflow-anchor: unset; overflow-clip-margin: unset; overflow-wrap: unset; overflow: unset; overscroll-behavior-block: unset; overscroll-behavior-inline: unset; overscroll-behavior: unset; padding-block: unset; padding: unset; padding-inline: unset; page: unset; page-orientation: unset; paint-order: unset; perspective: unset; perspective-origin: unset; pointer-events: unset; position: fixed; quotes: unset; r: unset; resize: unset; right: unset; rotate: unset; ruby-position: unset; rx: unset; ry: unset; scale: unset; scroll-behavior: unset; scroll-margin-block: unset; scroll-margin: unset; scroll-margin-inline: unset; scroll-padding-block: unset; scroll-padding: unset; scroll-padding-inline: unset; scroll-snap-align: unset; scroll-snap-stop: unset; scroll-snap-type: unset; scroll-timeline: unset; scrollbar-color: unset; scrollbar-gutter: unset; scrollbar-width: unset; shape-image-threshold: unset; shape-margin: unset; shape-outside: unset; shape-rendering: unset; size: unset; speak: unset; stop-color: unset; stop-opacity: unset; stroke: unset; stroke-dasharray: unset; stroke-dashoffset: unset; stroke-linecap: unset; stroke-linejoin: unset; stroke-miterlimit: unset; stroke-opacity: unset; stroke-width: unset; tab-size: unset; table-layout: unset; text-align: unset; text-align-last: unset; text-anchor: unset; text-combine-upright: unset; text-decoration: unset; text-decoration-skip-ink: unset; text-emphasis: unset; text-emphasis-position: unset; text-indent: unset; text-overflow: unset; text-shadow: unset; text-size-adjust: unset; text-transform: unset; text-underline-offset: unset; text-underline-position: unset; white-space-collapse: preserve; timeline-scope: unset; top: 0px; touch-action: unset; transform: unset; transform-box: unset; transform-origin: unset; transform-style: unset; transition: unset; translate: unset; user-select: text; vector-effect: unset; vertical-align: unset; view-timeline: unset; view-timeline-inset: unset; view-transition-name: unset; visibility: unset; border-spacing: unset; -webkit-box-align: unset; -webkit-box-decoration-break: unset; -webkit-box-direction: unset; -webkit-box-flex: unset; -webkit-box-ordinal-group: unset; -webkit-box-orient: unset; -webkit-box-pack: unset; -webkit-box-reflect: unset; -webkit-highlight: unset; -webkit-line-break: unset; -webkit-line-clamp: unset; -webkit-mask-box-image: unset; -webkit-mask: unset; -webkit-mask-composite: unset; -webkit-print-color-adjust: unset; -webkit-rtl-ordering: unset; -webkit-ruby-position: unset; -webkit-tap-highlight-color: unset; -webkit-text-combine: unset; -webkit-text-decorations-in-effect: unset; -webkit-text-fill-color: unset; -webkit-text-security: unset; -webkit-text-stroke: unset; -webkit-user-drag: unset; -webkit-user-modify: unset; widows: unset; width: unset; will-change: unset; word-break: unset; word-spacing: unset; x: unset; y: unset; z-index: unset;">产品描述 我们提供2�?�?英寸硅或碳化硅基氮化�?GaN on SiC/Si) HEMT 外延片，也可提供蓝宝石基氮化镓（GaN on Sapphire）HEMT外延� SiC/Si基GaN HEMT典型外延结构 1.GaN on SiC HEMT外延 该外延材料结合了SiC优异的导热性能和GaN高频和低损耗性能，所以GaN on SiC 热导率高，使得器件可以在高电压和高漏电流下工作，是射频器件的理想材料。目前， GaN-on-SiC外延片主要应用于5G基站、国防领域射频前端的功率放大器（PA）� 2.GaN-on-Si HEMT外延 由于使用Si衬底材料,可在大直径硅晶圆上外延GaN且具有与传统Si工艺兼容等优�?成为功率半导体技术发展的理想选择。GaN on Si HEMT外延有常开型即耗尽型（D型）和常关型即增强型（E型）两种� Si基和SiC基GaN HEMT结构性能对比 项目 GaN on SiC GaN on Si 晶格失配 3.50% 16.90% 热膨胀系数 25% 56% 缺陷密度 5E+8/cm2 1E+9/cm2 漏电� � � 集成可能� 中等 � 3.GaN-on-Sapphire HEMT外延 该外延结构具有良好的均匀性、高击穿电压、极低的缓冲区泄漏电流、高电子浓度、高电子迁移率和低方块电阻，用于射频和功率半导体器件。在蓝宝石衬底上生长� GaN HEMT 可以通过将器件倒装芯片键合到导热和电绝缘的衬底（例如氮化铝陶瓷）上来实现热管理� GaN on Sapphire HEMT典型外延结构 注：�?023�?�?日起，出口该产品需要出口许可证；国内供应不受影哌�/span>