晶格常数

Lattice Parameters

a=5.148, c=13.863

密度

Density

4.64g/cm3

熔点

Melting Point

1250ℂ�/span>

居里温度

Curie Point

1142±2ℂ�/span>

硬度

Mohs Hardness

5

介电常数

Dielectric Constant

ε11/ε0=85; ε33/ε0=29.5

电阻系数Thermal Conductivity

38W/m/℃at25ℂ�/span>

热膨胀系数

Thermal Expansion Coefficient

a1=a2=2×10-6/�? a3=2.2×10-6/℃at25ℂ�/span>

压电常数

Piezoelectric Strain Constant

d22=2.04×10-11C/N,d33=0.6×10-11C/N,d15=7X10-11C/N＋�/span>d31=-0.1X10-11C/N

Elastic Stiffness Constant

C11E=2.04×1011N/m2,C33E=2.46×1011N/m2,

直径

Diameter

76.2mm±0.3mm

100.0mm±0.3mm

76.2mm±0.3mm

100.0mm±0.3mm

76.2mm±0.3mm

100.0mm±0.3mm

基准靡�/span>

Orientation Flat (OF)

22mm±2mm

22mm±2mm

Perpendicular to X ± 0.2°

22mm±2mm

22mm±2mm

Perpendicular to X ± 0.2°

22mm±2mm

22mm±2mm

Perpendicular to X ± 0.2°

第二参考面

Second Refer. Flat (RF)

10mm±3mm

Cw180° ± 0.5° from OF

10mm±3mm

Cw225° ± 0.5° from OF

10mm±3mm

Cw270° ± 0.5° from OF

厚度

Thickness

500um ± 20um

350um ± 20um

500um ± 20um

350um ± 20um

500um ± 20um

350um ± 20um

传播表面

Propagating surface

�?� side

Ra � 8

�?� side

Ra � 8

�?� side

Ra � 8

晶片背面

Wafer backside

GC#1000lapped & etched

0.2um≤Ra�?.7um

GC#1000lapped & etched

0.2um≤Ra�?.7um

GC#1000lapped & etched

0.2um≤Ra�?.7um

TTV

� 10um

LTV

� 2.0um within an area of5×5mm2

PLTV

� 95% (3mmfrom edge excluded)

BOW

-25um � Bow � +25um

居里温度

Curie Temperature

1142ℂ�/span>±3ℂ�/span>(DTA method)

边缘倒角Edge Beveling

Edge rounding