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PECVD 设备 卧式
产品简今/div>

产品概述/Product Introduction9/span>

PECVD主要应用于氧化硅(SiO? 和氮化硅(SiN4) 材料的薄膜生长,工作原理是在低压引入高频射频电源,采取电容耦合方式使工艺气体电离放电,形成等离子体状态,产生大量的活性基团,这些活性基团在衬底材料表面发生化学反应并沉积到衬底表面,生长出氧化?SiO? 或氮化硅(SiN4) 薄膜

PECVD is mainly used for thin film growth of silicon oxide (SiO? and silicon nitride (SiN4) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO? or silicon nitride (SiN4) thin films.

产品特点/Product Characteristics9/span>

成膜质量髗/p>

High film quality

体积小占地面积小,操作简侾/p>

Small volume, small floor area and simple operation

具有良好的工艺性能,使用范围广泚/p>

Has good process performance and wide application range


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