产品概述/Product Introduction９�/span>

� 主要用于4-8英寸砷化镓、磷化铟等化合物单晶生长

Mainly used for single crystal growth of 4-8 inches of gallium arsenide, indium phosphide and other compounds

� 设备由机架、安瓿支撑机构、加热器和控制系统组戏�/p>

The equipment consists of a rack, ampoule support mechanism, heater and control system

� 能够实现安瓿移动和转动的精确控制

Accurate control of ampoule movement and rotation can be realized

产品特点/Product Characteristics９�/span>

� 工业计算机控制系�?WINDOWS系统界面，操作方便简�?

Industrial computer control system (WINDOWS system interface, easy and concise operation)

� 关键部件均采用进�?确保设备的高可靠�?/p>

The key parts are imported to ensure the high reliability of the equipment

� 控温精度�?温区控温稳定性好

High temperature control precision and good temperature control stability in temperature zone

� 具有断电报警、超温、欠温报警、极限超温报警等多种安全保护功能

lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm

� 速度可调的梯形波、三角波及正弦波等旋转功胼�/p>

Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed

� 单晶质量髗�/p>

High quality single crystal

技术指�?Technical Indicators９�/span>

晶片类型:4/6英寸 Wafer type: 4/6 inches	工作温度范围:1100ℂ�/p> Operating temperature range: 1100ℂ�/p>
加热�?*温度:1250°C Maximum heater temperature: 1250ℂ�/p>	控温精度:�?.5ℂ�/p> Temperature control accuracy: �?.5ℂ�/p>
控温段数:4殴�/p> Number of temperature control sections: 4 sections	炉腔压力:4MPa Furnace chamber pressure: 4MPa

应用范围/Scope９�/span>

� 广泛用于材料的绀蜗下降的单晶生长

Bridgman-descending single crystal growth widely used in materials