产品概述/Product Introduction９�/span>

� 微波等离子化学气相沉积技�?MPCVD) , 通过等离子增加前驱体的反应速率,降低反应温度。适合制备面积大、均匀性好、纯度高、结晶形态好的高质量的金刚石单晶和多晶薄膛�/p>

Microwave plasma chemical vapor deposition (MPCVD), which increases the reaction rate of precur-sors and reduces the reaction temperature by plasma. It is suitable for preparing diamond single crystal and polycrystalline films with large area, good uniformity, high purity and good crystal morphology

技术指�?Technical Indicators９�/span>

测温: 300-1500°C Temperature measurement: 300-1500°C	极限真空: 5*10E-4Pa Limit vacuum: 5*10E-4Pa
气路系统: 6�?/p> Gas path system: 6 channels	压力范围: 5-300Torr Pressure range: 5-300Torr
微波功率: 0.5-15Kw连续可调 Microwave power: 0.5-15Kw continuously adjustable	功率稳定�? <2% Power stability: < 2%
波纹:�?% Ripple:�?%	微波频率: 2450MHz�?0MHz Microwave frequency: 2450MHz�?0MHz
微波泄露倻� <5Mw/cm² Microwave leakage value: < 5Mw/cm²	放电区域:�?00mm Discharge area:�?00mm
沉积区域:�?0mm Sedimentation area:�?0 mm	生长速率: >12um Growth rate: > 12um