溅射离子枪主要用逓�

• 溅射清洗/表面科学中样品表面处理， MBE and HV 溅射过程

• 离子辅助沉积

• 离子束溅射镀膛�/span>

• 反应离子刻蚀

  技术指栆�

  离子能量	25eV - 5keV
  总的离子束电�?/span>	1mA (at 5kV with Argon) High Current Version:up to 4mA (at 5kV with Argon)
  电流密度	120��A/cm2 at 100mm working distance
  离子束发散角	Ion energy dependant (typically 15��)
  工作距离	100 mm (typically)
  等离子体�?/span>	Alumina (superior than other dielectric materials due to highest yield of secondary electrons)
  气体进气口径	CF-16 (1.33“OD)
  气体流逞�/span>	1 - 5 sccm (1�? sccm typical� gas dependant)
  工作真空�?/span>	10-6mbar - 10-3mbar (1x10-5mbar typical in chamber with 300l/s pimp). Low 10-6mbar range possible - beam current then 140��A max.
  激发模弎�/span>	微波放电等离子体 (无灯�?
  安装口径	CF-35 (2.75“OD)
  枪直徃�/span>	34mm (真空�?
  泄露阀	需要气体质量流量计

第二代等离子体源，可以提供离子源，原子源，离�?原子混合溏�/strong>

原子源主要用途：

制备氮化物，e.g. GaN� AlN� GaAsN� SiN etc.

氢原子清洗，氢原子辅助MBE.

制备氧化物，e.g. ZnO� Superconductors� Optical coatings� Dielectrics.

掺杂＋�/span>e.g. ZnSe

离子源用逓�/span>:

离子束辅助沉�?/span>(IBAD) for both UHV and HV processes

溅射沉积，双离子束溅射，Sputter deposition and dual ion beam sputtering

溅射清洗/表面科学中的样品表面处理＋�/span>Sputter cleaning / surface preparation in surface science� MBE and HV sputter processes.

原位刻蚀＋�/span>e.g. Chlorine

技术参数：

Vacuum compatibility: Fully UHV compatible

Bakeable: >200��C

Microwave power: 250W max at 2.45GHz

Magnet type: Permanent rare-earth. Removeable for bakeout without breaking vacuum

Mounting: NW63CF (4.5"OD)

In vacuum length: 300mm (custom lengths possible): In vacuum diameter max = 57mm

Beam diameter: ~25mm at source (narrower beams also easily produced)

Plasma cup: Alumina

Aperture: Alumina or Boron Nitride

Gas flow rate: 0.01-100sccm depending on aperture selected

Working pressure: ~10-7 Torr to 5x10-3 Torr depending on aperture� pump and application - please contact tectra to discuss your application. Differential pumping option available

Working Distance: 50mm-300mm. 150mm typical

Cooling: Fully water-cooled (including magnetron)

Power supplies:

Microwave

Grid supply*

* Ion and Hybrid Source only

19� rack mount. 3U height. 230VAC� 50Hz or 115VAC� 60Hz

19� rack mount. 3U height. 230VAC� 50Hz or 115VAC� 60Hz

主要特点９�/strong>

Key Features of the Plasma Source:

Filamentless

Suitable for use with most gases including reactive gases such as oxygen� chlorine� hydrogen� nitrogen etc.

No microwave tuning

Factory set. Simply turn the plasma on and off.

User configurable

The extraction optics are designed to be quickly and easily exchanged allowing users to customise their source to suit a particular combination of sample size� working pressure and current density. Easily exchanged apertures enable beam diameter� gas load and atom flux to be optimised.

simple bakeout preparation

new bakeable ECR magnets allow simple bekeout preparation by just undoing 4 screws. The magnets do not need to be removed but are still on the air side on a closed cooling loop. Hence no sintered material is exposed vacuum.

Al2O3 plasma region

Alumina plasma cup as standard with higher yield of secondary electrons� better resistance against aggressive gases such as Oxygen and ideal plasma striking capability

compact

the air side envilope sizes are brought to a minimum of just 258mm from flange (knife edge side) to case end