Si-on-金刚矲/p>
基于键合技术实现了金刚石基硅复合衬底,有望解决高功率密度硅器件散热能力不足的难颗/p>
Based on the bonding technology, Si-on-diamond substrate has been realized, which is expected to solve the problem of insufficient heat dissipation of Si devices with high power density.