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suns-Voc测试?/p>
如何利用Suns-Voc进行浆料与烧结技术优匕/p>
少子寿命,PN结的好坏,表面及体内的复合情况,材料质量、钝化效果等" b3 X _6 K$ b1 u" ~- I. E1 V; A
Life time,Pseudo-EFF Pseudo-Voc Pseudo-FF Ideality factor
对比该曲线与*后测定的I臲/span>V曲线,可以准确测量出电池的串联电阻、/span>
Suns-Voc系统特征
晶元测定的温控为25C
电压探针的高精准?/span>
兼容磁性探钇/span>
配备全套浓度补正滤色片的疝气?/span>
后支柱可调节高度,准确调节亮?/span>
适用标准I臲/span>V曲线图及Suns-Voc曲线国/span>
不受串联电阻的影响,测定晶片特征
Suns-Voc Applications
By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present) the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel
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