浜у搧姒傝堪锛欬/span>

JDL-BAE-33-200-808-TM-8-4.0鏄疛enoptik鐨勪竴娆鹃珮鍔熺巼鍗曞彂浜屾瀬绠℃縺鍏夊櫒锛屾尝闀?08nm锛屽彂灏勬瀬瀹藉害200um锛岃繛缁緭鍑哄姛鐜囬珮杈?W锛屽叿鏈夐珮鐢靛厜杞崲鏁堢巼銆侀暱瀵垮懡銆侀珮绋冲畾鎬х瓑鐗圭偣銆侟/span>

浜у搧鐗圭偣锛欬/span>

? 楂樻縺鍏夊姛鐜嘃/span>

? 楂樼數鍏夎浆鎹㈡晥鐜嘃/span>

? 闀垮鍛姐€侀珮绋冲畾鎬?/span>

? 浼樿秺鐨勫厜瀛︾壒鎬?/span>

浜у搧搴旂敤锛欬/span>

? 鍥轰綋婵€鍏夊櫒鍜屽厜绾ゆ縺鍏夊櫒娉垫郸婧忺/span>

?宸ヤ笟銆佺瀛﹀拰鍖荤枟绯荤粺锛屽姹借溅宸ヤ笟鐨勫垏鍓层€佺剨鎺ワ紝鍖荤枟缇庡绛堻/span>

?鍗板埛宸ヤ笟锛屽鍒剁増鍗板埛绛堻/span>

?鍥介槻瀹夊叏锛孅/span>濡傛縺鍏夋祴璺濄€佺數瀛愬鎶椼€佸寮瑰埗瀵肩瓑

鎶€鏈弬鏁帮細

鍨嬪彿	JDL-BAE-33-200-808-TM-8-4.0
娉㈤暱	808±3nm
鍏夎緭鍑哄姛鐜	8W
宸ヤ綔妯″紡	CW锛 swiched
鍙戝皠鐐规暟閲	1
瀹藉害	200±10um
鍙戝皠鏋侀棿璺	600±20um
鑵旈暱	4000±20um
鍘氬害	120±5um
蹇酱鍙戞暎瑙	27~30°(FWHM) 46~50°(95%鐨勫姛鐜囦笅鍏ㄥ搴?
鎱㈣酱鍙戞暎瑙	7~10°@8W(FWHM) 8~11°@8W(95%鐨勫姛鐜囦笅鍏ㄥ搴?
鑴夊啿娉㈤暱	803±3nm
鍏夎氨甯﹀	2~3nm
鏂滃潯鏁堢巼	1~1.1%
闃堝€肩數娴	1.6~1.8A
宸ヤ綔鐢垫祦	9~10A
宸ヤ綔鐢靛帇	1.7~2V
涓茶仈闃绘姉	17~28mΩ
TE鏋佸寲搴	97%
鐢靛厜杞崲鏁堢巼	50~54%

鍔熺巼銆佺數娴佸拰鐢靛帇鐗瑰緛鍥撅細

鍏夎氨鐗瑰緛鍥撅細